A 9T FinFET SRAM cell for ultra-low power application in the subthreshold regime

Due to the scaling of CMOS, limitations these devices raised need for alternative nano-devices. Various are proposed like FinFET, TFET, CNTFET. Among these, FinFET emerges as one promising which can replace CMOS due its low leakage in nanometer regime. The electronics nowadays more compact and efficient terms battery consumption. SRAMs have been replaced by CMOS. Two SRAM cells power having high stability. Performance comparison has done analyze static noise margins. simulation is at 20 nm technology. It analyzed that write margin improved 9T cell achieves an improvement 1.49x. read also showing a drastic over existing compared paper. hold was found be better case 0.4 V. gate length varied find effect on with length.